JCR (SCI & SCIE)

High Voltage Power Electronics Laboratory

 

Optimization of Rate of Rise of Voltage Pulse Through IGBT Gate Signal Tuning Technique
Author
Joo-Young Lee, Min-Kyu Choi, Hong-Je Ryoo
Journal
Trans. on Plasma Science
Impact factor
I.F : 1.3
Volume
Early Access
File
Optimization_of_Rate_of_Rise_of_Voltage_Pulse_Through_IGBT_Gate_Signal_Tuning_Technique.pdf (2.0M) 15회 다운로드 DATE : 2025-05-19 09:57:02

Optimization of Rate of Rise of Voltage Pulse Through IGBT Gate Signal Tuning Technique

 

Address.CHUNG-ANG UNIV. 207-306(Bobst Hall), 84, Heukseok-ro, Dongjak-gu, Seoul, South Korea (Zip code : 06974)

Copyright ⓒ 2022. High Voltage Power Electronics Laboratory | All rights reserved | Designed by dsso.kr